Broadband Low Noise Amplifier 0.45dB NF 0.1~2GHz 20dB Gain with Bias Tee

PN#: LNA100M2GBT is a high-linearity, ultra low noise amplifier in a small 1-1/8”x15/16”x0.48” shielded RF enclosure. At 900 MHz, the amplifier typically provides 20 dB gain, +36 dBm OIP3 at a 68 mA bias setting, and 0.45 dB noise figure. The LNA can be biased from a single supply +3.3V to +5V. The DC power is fed through output SMA connector. It combines Bias Tee and LNA in one with DC Power via RF output port.  Listed pictures include Product Picture and S Parameter from 100M to 2GHz. This LNA includes the RF Enclosure as shown in picture. Proudly Made in USA by Lotus Communication Systems, INC. in Massachusetts. Features Frequency Range: 100 MHz to 2 GHz Noise Figure: typical 0.45 dB @ 900MHz Gain: 20 dB Gain at 900 MHz Output P1dB: +22 dBm CW Output IP3: +36 dBm DC Voltage: +3.3 to +5V Operating Current: 68 mA Stainless Steel SMA Female Connector EMI Shield Option (PN#: LNA100M2GBTW) ROHS Compliant Applications Repeaters/DAS Mobile Infrastructure LTE/WCDMA/CDMA/GSM General Purpose Wireless SDR & Ham Radio Test Instrumentation Resources LNA100M2GBT Datasheet