HO-ED-EM-06 Hall Effect Apparatus

Hall Effect Apparatus Holmarc's Hall Effect apparatus (Model no: HO-ED-EM-06) is designed with state of the art modules and components. Digital display is used for all value read outs. Electromagnets, gauss meter, power supply, etc. are designed and made as separate modules for students to understand the apparatus and the principles involved easily. Safety is given due consideration in the design of the apparatus The system consists of two cartridges, each of which is equipped with 'p' and 'n' doped germanium crystal .The cartridges can be plugged easily and safely into the D connector system. The Hall Effect set up provides all operating parameters for the samples and displays the Hall voltage, sample current as well as the sample temperature. The doped Germanium samples are used to measure the Hall-voltage as a function of the sample current, the magnetic flux density and the sample temperature. The Hall voltage is caused by the deflection of the moving charge carriers in the magnetic field due to the Lorentz force, of which, direction can be predicted by the right hand rule. The sign of the Hall coefficient is determined by the polarity of the charge carriers: a negative sign implies carriers with a negative charge ("normal Hall effect"), and a positive sign indicates carriers with a positive charge ("anomalous Hall effect"). The Hall coefficient depends on the material and the temperature. Experiment:     Measurement of Hall voltage as a function of a.    Magnetic flux density b.    Sample temperature c.    Sample current    Determination of density and mobility of charge carriers We get Carrier Density from the equation, n   =   [  1 / (  RH e  )  ]  c m3 We get Carrier Mobility from the equation, µ   =   RH  .  σ  c m2 Volt-1 sec-1 where σ is the conductivity of material Determination of Hall coefficient of semi conductor crystals The Hall voltage VH is caused by the deflection of the moving charge carriers in the magnetic field due to the Lorentz force, whose direction may predicted by the right hand rule. The factor 1 / ( ne ) is called Hall coefficient  RH. RH   =   (  VH / B  )  x  (  d/IH  )  c m3 Coulomb-1 B -   Magnetic flux density IH -   Current through the semi conductor d -   Thickness of the conductor n -   Concentration of charge carriers Specifications: Hall Current     0 - 10 mA     Hall Voltage     0 - 200 mV     Temperature     Ambient - 50°C     Crystal     n - type and p - type lightly doped Germanium (Ge)     Field density     0 - 5 ± 5% KG Schematic: Related Topics:  N - type and p - type semiconductors     Hall co-efficient     Hall voltage     Carrier density     Carrier mobility     Magnetic flux density   Scope of Delivery: Hall Effect Control Unit Sample control Holder with Rigid Base Gauss Probe Holder with Mount Digital Gauss Meter Hall Effect Catridge Electromagnet Constant Current Power Supply Accessories Connecting Cables Instruction Manual